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Other articles related with "Al-doped ZnO"：
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16202 |
Qi Chen(陈启), Xinjian Li(李欣健), Yao Wang(王遥), Lijie Chang(常立杰), Jian Wang(王健), Yuewen Zhang(张跃文), Hongan Ma(马红安), and Xiaopeng Jia(贾晓鹏) |
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Utilizing of high-pressure high-temperature synthesis to enhance the thermoelectric properties of Zn0.98Al0.02O with excellent electrical properties |
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Chin. Phys. B
2021 Vol.30 (1): 16202-
[Abstract]
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[HTML 1 KB]
[PDF 2285 KB]
(172)
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118506 |
Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢) |
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High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer |
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Chin. Phys. B
2016 Vol.25 (11): 118506-118506
[Abstract]
(745)
[HTML 0 KB]
[PDF 866 KB]
(320)
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46106 |
Jia Zhi-Nan (贾志楠), Zhang Xiao-Dan (张晓丹), Liu Yang (刘阳), Wang Yan-Feng (王延峰), Fan Jun (樊君), Liu Cai-Chi (刘彩池), Zhao Ying (赵颖) |
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Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods |
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Chin. Phys. B
2014 Vol.23 (4): 46106-046106
[Abstract]
(616)
[HTML 1 KB]
[PDF 1047 KB]
(896)
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68503 |
Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO |
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Chin. Phys. B
2013 Vol.22 (6): 68503-068503
[Abstract]
(703)
[HTML 1 KB]
[PDF 359 KB]
(1268)
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